Proton damage on InGaAs solar cells having a 3 μm InP window layer

Author

Messenger, Scott R. ; Cotal, Hector L. ; Walters, Robert J. ; Summers, Geoffey P.

Author_Institution

SFA Inc., Landover, MD, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

279

Lastpage

282

Abstract

As part of a continuing program to determine the space radiation resistance of InP/In_0.53Ga_0.47As tandem solar cells on Ge substrates, n/p In_0.53Ga_0.47As solar cells fabricated by Research Triangle Institute (RTI) were irradiated with protons of various energy. The cells were grown with a 3 μm n-InP window layer to mimic the top cell in the tandem cell configuration for both 1 sun, AMO solar absorption and radiation effects. The results have been plotted against proton fluence and “displacement damage dose” which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve is then obtained for predicting the effect of irradiation by any particle of any energy on these cells

Keywords

III-V semiconductors; gallium arsenide; indium compounds; proton effects; solar cells; Ge substrates; InP window layer; InP-InGaAs; displacement damage dose; nonionizing energy loss; proton damage; semiconductors; space radiation resistance; tandem solar cells; Degradation; Electronic mail; Electrons; Indium gallium arsenide; Indium phosphide; Laboratories; Photovoltaic cells; Protons; Space technology; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492031

Filename

492031