Surface passivation of InP-based In0.53Ga0.47As quantum wires using silicon interlayer-based passivation technique

Applicability of the Si interface control layer (ICL) based passivation technique to compound semiconductor quantum structures was investigated by using In_0.53Ga_0.47As wires formed by selective MBE growth. Photoluminescence (PL) intensity from the quantum wires (QWRs) reduced rapidly with reducing the well-to-surface distance t_ws. This PL reduction can be explained in terms of the carrier loss due to the rapid nonradiative recombination process at the surfaces. By applying the Si ICL-based passivation process to the wires, the PL reduction was effectively suppressed and a nearly complete recovery of PL intensity can be achieved, showing a maximum recovery factor of the PL intensity of 250. The recovery of PL intensity is due to reduction of interface state densities by Si ICL process which realizes reasonably ordered and coherent interface structures as indicated by XPS analysis