Fabrication of high-performance InP MESFETs with in-situ pulse-plated metal gates

Author

Uno, S. ; Hashizume, T. ; Sato, T. ; Hasegawa, H.

Author_Institution

Graduate Sch. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

338

Lastpage

341

Abstract

Although InP has higher saturation velocity and higher thermal conductivity than GaAs, its use in the active channel of electron devices has been limited by lack of suitable Schottky gate technology. The purpose of this paper is to demonstrate that high-performance InP MESFETs with Schottky barrier heights (SBHs)=0.85-0.89 eV can be realized by a novel in-situ electrochemical etching/plating technique. The InP Schottky barriers produced by this electrochemical process are free of interfacial oxides and Fermi level pinning is removed, realizing workfunction-dependent SBHs. High-barrier height, low-leakage and stable InP MESFETs are realized for the first time using this process

Keywords

III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; electroplating; etching; indium compounds; semiconductor device metallisation; 0.85 to 89 eV; InP; InP Schottky barriers; Schottky gate technology; active channel; electrochemical etching; electrochemical plating; fabrication process; high-performance InP MESFETs; in-situ pulse-plated metal gates; Electrochemical processes; Electrodes; Epitaxial layers; Etching; Fabrication; Indium phosphide; MESFETs; Schottky barriers; Schottky diodes; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492048

Filename

492048