Title :
Fabrication of high-performance InP MESFETs with in-situ pulse-plated metal gates
Author :
Uno, S. ; Hashizume, T. ; Sato, T. ; Hasegawa, H.
Author_Institution :
Graduate Sch. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
Although InP has higher saturation velocity and higher thermal conductivity than GaAs, its use in the active channel of electron devices has been limited by lack of suitable Schottky gate technology. The purpose of this paper is to demonstrate that high-performance InP MESFETs with Schottky barrier heights (SBHs)=0.85-0.89 eV can be realized by a novel in-situ electrochemical etching/plating technique. The InP Schottky barriers produced by this electrochemical process are free of interfacial oxides and Fermi level pinning is removed, realizing workfunction-dependent SBHs. High-barrier height, low-leakage and stable InP MESFETs are realized for the first time using this process
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; electroplating; etching; indium compounds; semiconductor device metallisation; 0.85 to 89 eV; InP; InP Schottky barriers; Schottky gate technology; active channel; electrochemical etching; electrochemical plating; fabrication process; high-performance InP MESFETs; in-situ pulse-plated metal gates; Electrochemical processes; Electrodes; Epitaxial layers; Etching; Fabrication; Indium phosphide; MESFETs; Schottky barriers; Schottky diodes; Surface topography;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492048
