Title :
Fabrication of monolithic integration of 1.55 μm QW laser and HBT
Author :
Yu-dong, Li ; Hong-bo, Sun ; Yi, Dong ; Qing-ming, Zeng ; Ke-li, Cai ; Yi-ding, Wang ; Shi-yong, Liu
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Abstract :
We report in this paper a novel structural monolithic integration of a 1.55 μm multiquantum well (MQW) LD and a heterojunction bipolar transistor (HBT) and try a new simplified technology. By using of the substitutional Si3O4 isolating film we realized the p-type self-aligned contact metals of the ridge waveguide MQW lasers. And also the base metal to emitter mesa in heterojunction bipolar transistors has been finished by utilizing the self-aligned processes. We have obtained the MQW lasers and HBTs on the same InP substrate. The threshold current of about 20 mA of the MQW laser and the DC amplifier factor of about 70 in the HBT have been achieved
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical fibre communication; optical planar waveguides; optical transmitters; quantum well lasers; ridge waveguides; 1.55 micrometre; 20 mA; DC amplifier factor; HBT; InP; OEICs; QW laser; heterojunction bipolar transistor; monolithic integration; multiquantum well LD; optical fibre communications; p-type self-aligned contact metals; ridge waveguide; self-aligned processes; substitutional isolating film; threshold current; Heterojunction bipolar transistors; Indium phosphide; Isolation technology; Monolithic integrated circuits; Optical device fabrication; Quantum well devices; Semiconductor films; Substrates; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492257
