1.3-μm laser diodes with spot-size converter for access networks

Author

Yamamoto, Mitsuo ; Itaya, Yoshio ; Sugie, Toshihiko

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

376

Lastpage

379

Abstract

A 1.3 μm laser diode with a butt-jointed spotsize converter was successfully fabricated with a 2-inch full wafer process. Although the laser diodes are integrated with the spot-size converter, a threshold current of less than 5.6 mA and slope efficiency as large as 0.41 W/A at 25 C were obtained. These results demonstrate that the newly developed SSC-LD is promising as a light source for a low cost optical module for access networks

Keywords

infrared sources; laser transitions; light sources; optical fabrication; optical fibre subscriber loops; optical transmitters; semiconductor lasers; semiconductor technology; μm laser diodes; 1.3 mum; 2 in; 25 C; 5.6 mA; access networks; butt-jointed spotsize converter; full wafer process; laser diode integration; light source; low cost optical module; slope efficiency; spot-size converter; threshold current; Capacitive sensors; Diode lasers; Fabrication; Indium phosphide; Metalworking machines; Optical coupling; Photonic band gap; Pulse measurements; Quantum well devices; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492261

Filename

492261