Title :
Self-Formed Barrier Technology using CuMn Alloy Seed for Copper Dual-Damascene Interconnect with porous-SiOC/porous-PAr Hybrid Dielectric
Author :
Watanabe, Toshio ; Nasu, Hideyuki ; Minamihaba, G. ; Kurashima, N. ; Gawase, A. ; Shimada, Masanobu ; Yoshimizu, Y. ; Uozumi, Yosuke ; Shibata, Hajime
Author_Institution :
Toshiba Corp., Yokohama
Abstract :
Self-formed barrier technology using copper (Cu) manganese (Mn) alloy seed was applied for Cu dual-damascene interconnect with porous-SiOC/porous-PAr (k=2.3) hybrid dielectric for the first time. More than 90% yield for wiring and via-chain was obtained. 70% reduction in via resistance was confirmed compared with the conventional process. To estimate the moisture resistance property of self-formed barrier, via resistance change was measured with dummy density pattern. As the result, it was found that the resistance change ratio of via for self-formed barrier does not depend on the dummy density, probably due to the high moisture resistance property of self-formed oxide barrier. In addition, outgas at high temperature is found to be essential to form self-formed barrier for porous dielectric.
Keywords :
copper alloys; dielectric materials; integrated circuit interconnections; manganese alloys; organic-inorganic hybrid materials; porous materials; CuMn; copper dual-damascene interconnects; copper manganese alloy seed; dummy density pattern; moisture resistance property; porous-SiOC- porous-PAr hybrid dielectrics; self-formed barrier technology; self-formed oxide barrier; Chemical vapor deposition; Copper alloys; Dielectrics; Manganese alloys; Manufacturing processes; Metallization; Moisture; Semiconductor device manufacture; Temperature; Wiring;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382332
