Integration and Interconnect Reliability of Warm A1 Process with CVD-A1 seed layer deposited using a novel precursor of TMAAB (trimethylarninealane borane)

Al-plug process using chemical vapor deposited (CVD) Al seed layer prepared with trimethylaminealane borane (TMAAB) as a precursor lias been developed for sub-60 mn design-rule dynamic random access memory (DRAM). In terms of the precursor stability and the particle generation performance, the TMAAB is better as compared to methylpyrrolidine alane (MPA) due to the depression of (AIH₃)_x polymer formation which generates particle. Integration challenges of Al-plug process related to via-filling were successfully overcome and the device speed was improved compared to W-plug process. The yield and interconnect reliability comparable to W-pfug have been achieved in multi-level-metallization.