Title :
Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy
Author :
LaPierre, R.R. ; Robinson, B.J. ; Thompson, D.A.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; (100) InP substrates; ECR plasma-assisted epitaxy; InGaAsP; InP; LCM; QW; lateral composition modulation; optical properties; photoluminescence; plasma-assisted epitaxy; single quantum wells; structural properties; thick InGaAsP layers; Distributed feedback devices; Epitaxial growth; Indium phosphide; Material properties; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492297
