مرکز منطقه ای اطلاع رساني علوم و فناوري - Carrier lifetime in carbon doped In<sub>0.53</sub>Ga<sub>0.47</sub>As

DocumentCode :

296358

Title :

Carrier lifetime in carbon doped In_0.53Ga_0.47As

Author :

Sermage, B. ; Benchimol, J.L. ; Michel, J.C. ; Alexandre, F. ; Launay, P. ; Caffin, D.

Author_Institution :

Lab. de Bagneux, CNET, Bagneux, France

fYear :

1996

fDate :

21-25 Apr 1996

Firstpage :

572

Lastpage :

575

Abstract :

Carrier lifetime has been measured in carbon doped CBE grown In _0.53Ga_0.47As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10¹⁸ cm^-3 and 7.10¹⁹ cm^-3, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors

Keywords :

Auger effect; III-V semiconductors; carbon; carrier lifetime; electrical resistivity; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoluminescence; semiconductor epitaxial layers; time resolved spectra; 4 to 400 ps; Auger recombination; DC current gain; In_0.53Ga_0.47As:C; base sheet resistance; carbon doped CBE grown In_0.53Ga_0.47As; carbon doped In_0.53Ga_0.47As; carrier lifetime; doping levels; heterojunction bipolar transistor; time resolved luminescence; Cameras; Charge carrier lifetime; Current measurement; Doping; Electrons; Indium gallium arsenide; Laser excitation; Luminescence; Performance gain; Radiative recombination;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location :

Schwabisch-Gmund

Print_ISBN :

0-7803-3283-0

Type :

conf

DOI :

10.1109/ICIPRM.1996.492312

Filename :

492312

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=296358