Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy

Author

Knorr, K. ; Rumberg, A. ; Zorn, M. ; Meyne, C. ; Trepk, T. ; Zettler, J.T. ; Richter, W. ; Kurpas, P. ; Weyers, M.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

590

Lastpage

593

Abstract

In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth

Keywords

III-V semiconductors; desorption; ellipsometry; gallium compounds; impurity absorption spectra; indium compounds; reflectivity; semiconductor growth; vapour phase epitaxial growth; Fabry-Perot like oscillations; GaAs; InGaP; InP; InP deoxidation behaviour; InP oxide; MOVPE; P-based semiconductor growth; characterisation; desorption temperature; doping; growth rates; linear-optical spectroscopy; metal organic vapour phase epitaxy; optical spectra; real-time monitoring; reflectance anisotropy spectroscopy; spectroscopic ellipsometry; surface temperature; Epitaxial growth; Epitaxial layers; Geometrical optics; Indium phosphide; Inductors; Monitoring; Reflectivity; Semiconductor growth; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492317

Filename

492317