Title :
Formation of Ni(Pt) Germanosilicide Using a Sacrificial Si Cap Layer
Author :
Chen, Yi-Wei ; Chang, Yu-Lan ; Chen, Yi-Cheng ; Shieh, Kevin ; Huang, Climbing ; Tzou, S.F.
Author_Institution :
United Microelectron. Corp., Tainan
Abstract :
Ni(Pt) alloy has been implemented in the SiGe silicidation process for 65nm node CMOS device fabrication. A thin Si cap layer was introduced into the in-situ doped Si1-xGexB film stack to further enhance the thermal stability of the silicide film. The Ni(Pt) germanosilicide temperature transition curves have been studied, N-/P-FET mismatch issues have been resolved, and a robust integration flow has been developed for the 65 nm node CMOS device fabrication.
Keywords :
Ge-Si alloys; MOSFET; nickel alloys; platinum alloys; silicon; thermal stability; CMOS device fabrication; FET mismatch issues; NiPt; SiGe; germanosilicide formation; integration flow; sacrificial silicon cap layer; silicidation process; size 65 nm; temperature transition curves; thermal stability; CMOS process; Fabrication; Germanium silicon alloys; Robustness; Semiconductor films; Silicidation; Silicides; Silicon germanium; Temperature; Thermal stability;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382345
