Title :
Correlation between trap characterization by drain conductance dispersion and current transient spectroscopy in InAlAs/InP HFET
Author :
Georgescu, B. ; Ducroquet, F. ; Girard, P. ; Guillot, G. ; Naït-Zerrad, K. ; Post, G.
Author_Institution :
CNRS, Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
Low frequency trapping effects in InP doped channel HFETs were investigated by current transient spectroscopy and conduction frequency dispersion measurements. By varying bias and temperatures, information on trap parameters and spatial localization can be obtained. Main dispersion effects ate attributed to InP growth related defects in the channel or at the channel/buffer interface
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; electron traps; field effect transistors; indium compounds; integrated optoelectronics; semiconductor device reliability; HFET; III-V semiconductors; OEICs; channel/buffer interface; current transient spectroscopy; drain conductance dispersion; growth related defects; low frequency trapping effects; spatial localization; trap characterization; trap parameters; Chemicals; Dispersion; Frequency; HEMTs; Indium phosphide; Leakage current; MODFETs; Optical modulation; Spectroscopy; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492335
