A double InGaAs/InP HBT technology for lightwave communication circuits design

Author

Launay, P. ; Caffin, D. ; Duchenois, A.M. ; Héliot, F.

Author_Institution

Lab. de Bagneux, CNET, Bagneux, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

701

Lastpage

703

Abstract

A InGaAs/InP double heterojunction bipolar transistor technology has been developed to meet the requirements of circuits for 40 Gb/s optical communication links. In particular a breakdown voltage higher than 10 V, cut-off frequencies higher than 60 GHz over a large emitter-collector voltage range have been achieved

Keywords

III-V semiconductors; bipolar MIMIC; bipolar digital integrated circuits; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; millimetre wave bipolar transistors; optical communication equipment; 13 V; 40 Gbit/s; 60 GHz; 70 GHz; DHBT technology; EHF; InP; MM-wave cutoff frequencies; breakdown voltage; double InGaAs/lnP HBT technology; double heterojunction bipolar transistor; lightwave communication circuits design; Breakdown voltage; Circuit synthesis; Dry etching; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Semiconductor films; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492390

Filename

492390