Title :
A Study of Adhesion and Improvement of Adhesion Energy Using Hybrid Low-k (porous-PAr/ porous-SiOC(k=2.3/2.3)) Structures with Multi-layered Cu Interconnects for 45-nm Node Devices
Author :
Usami, T. ; Maruyama, C. ; Tagami, M. ; Watanabe, K. ; Kameshima, T. ; Masuda, H. ; Shimada, M. ; Gawase, A. ; Kagawa, Y. ; Nakamura, N. ; Miyajima, H. ; Naruse, H. ; Enomoto, Y. ; Kitano, T. ; Sekine, M.
Author_Institution :
NEC Electron. Corp., Sagamihara
Abstract :
Adhesion tests for a real Cu/low-k patterned structure were studied for 45-nm node devices. Results from 4 point-bending (4PB) and modified edge lift-off tests (m-ELT) were compared. Cu dual damascene interconnects structures with stacked hybrid low-k which is porous-poly-arylene(p-PAr)/porous-SiOC(p-SiOC) (k=2.3/2.3) were evaluated. Peel-off occurred in different locations in the real patterned structures subjected to the m-ELT test and in the structures subjected to the 4PB test. In addition, the adhesion energy (Gc: interface fracture energy) of the peeled-off interfaces was improved (Ge ges1.6x) by different treatment processes.
Keywords :
adhesion; copper; fracture toughness; integrated circuit interconnections; integrated circuit testing; low-k dielectric thin films; multilayers; nanoelectronics; organic-inorganic hybrid materials; porous materials; surface energy; 4 point-bending test; Cu; adhesion energy; adhesion tests; dual damascene interconnects structures; hybrid low-k structures; interface fracture energy; modified edge lift-off tests; multilayered copper interconnects; peeled-off interfaces; porous-poly-arylene; size 45 nm; Adhesives; Dielectrics; Energy measurement; National electric code; Packaging; Propagation delay; Silicon carbide; Stress; Temperature; Testing;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382358
