Title :
Chemical and Plasma Oxidation Behaviors of NiSi and NiPtSi Salicide Films in 65nm Node CMOS Process
Author :
Chang, Yu-Lan ; Chen, Yi-Wei ; Chen, Yi-Cheng ; Shieh, Kevin ; Huang, Climbing ; Tzou, S.F.
Author_Institution :
United Microelectron. Corp., Tainan
Abstract :
The chemical and plasma oxidation behaviors of NiSi and NiPtSi salicide films in a 65 nm node CMOS device fabrication process have been investigated. By incorporating Pt into the nickel salicide formation process, the oxidation rate can be effectively reduced during both salicidation etch/clean and contact plasma etch processes. Data collected from this study suggests both stronger chemical bonding from PtSi and the aggregation of Pt near film surface attribute to this good oxidation resistance property.
Keywords :
CMOS integrated circuits; integrated circuit metallisation; nickel compounds; oxidation; platinum compounds; sputter etching; CMOS device fabrication process; NiPtSi; NiSi; chemical bonding; chemical oxidation; metallization; nickel salicide formation process; oxidation resistance property; plasma oxidation; salicide films; size 65 nm; CMOS process; Chemical processes; Etching; Fabrication; Nickel; Oxidation; Plasma applications; Plasma chemistry; Plasma devices; Surface resistance;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382359
