Title :
Impact of TaN/Ta copper barrier on full PEALD TiN/Ta2O5/TiN 3D damascene MIM capacitor performance
Author :
Thomas, M. ; Farcy, A. ; Deloffre, E. ; Gros-Jean, M. ; Perrot, C. ; Benoit, D. ; Richard, C. ; Caubet, P. ; Guillaumet, S. ; Pantel, R. ; Chenevier, B. ; Torres, J.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta2O5/TiN capacitor is integrated among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties and integrated MIM stack performance is studied. Unexpected lower current was obtained without the barrier layer. As a result, up to 17 fF/mum2 capacitance densities were achieved with breakdown voltage over 15 V and excellent voltage linearity.
Keywords :
MIM devices; capacitors; titanium compounds; 3D damascene; MIM capacitors; TaN-Ta; TiN-Ta2O5-TiN; capacitance densities; copper barrier; copper interconnect; full PEALD; Breakdown voltage; Capacitance; Copper; Dielectric materials; Electrodes; Etching; Integrated circuit interconnections; MIM capacitors; Radio frequency; Tin;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382377
