Impact of TaN/Ta copper barrier on full PEALD TiN/Ta2O5/TiN 3D damascene MIM capacitor performance

Author

Thomas, M. ; Farcy, A. ; Deloffre, E. ; Gros-Jean, M. ; Perrot, C. ; Benoit, D. ; Richard, C. ; Caubet, P. ; Guillaumet, S. ; Pantel, R. ; Chenevier, B. ; Torres, J.

Author_Institution

STMicroelectronics, Crolles

fYear

2007

fDate

4-6 June 2007

Firstpage

158

Lastpage

160

Abstract

MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta₂O₅/TiN capacitor is integrated among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties and integrated MIM stack performance is studied. Unexpected lower current was obtained without the barrier layer. As a result, up to 17 fF/mum² capacitance densities were achieved with breakdown voltage over 15 V and excellent voltage linearity.

Keywords

MIM devices; capacitors; titanium compounds; 3D damascene; MIM capacitors; TaN-Ta; TiN-Ta₂O₅-TiN; capacitance densities; copper barrier; copper interconnect; full PEALD; Breakdown voltage; Capacitance; Copper; Dielectric materials; Electrodes; Etching; Integrated circuit interconnections; MIM capacitors; Radio frequency; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

International Interconnect Technology Conference, IEEE 2007

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-1069-X

Electronic_ISBN

1-4244-1070-3

Type

conf

DOI

10.1109/IITC.2007.382377

Filename

4263689