DocumentCode
2964254
Title
Strategies of RC Delay Reduction in 45 nm BEOL Technology
Author
Kudo, Hiroyuki ; Ochimizu, H. ; Tsukune, A. ; Okano, S. ; Naitou, K. ; Sakamoto, Makoto ; Takesako, S. ; Shirasu, T. ; Asneil, A. ; Idani, Naoki ; Sugimoto, Kazuya ; Ozaki, S. ; Nakata, Y. ; Owada, Tetsu ; Watatani, H. ; Ohara, N. ; Ohtsuka, N. ; Sunayama
Author_Institution
Fujitsu Labs. Ltd, Tokyo
fYear
2007
fDate
4-6 June 2007
Firstpage
178
Lastpage
180
Abstract
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86 % compared to that listed in the ITRS 2006 update.
Keywords
RC circuits; dielectric materials; integrated circuit interconnections; BEOL technology; RC delay reduction; homogeneous interlayer dielectric; size 45 nm; ultrathinned barrier metal; Capacitance; Degradation; Delay; Dielectric constant; Electric variables; Etching; Laboratories; Microprocessors; Surges; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
International Interconnect Technology Conference, IEEE 2007
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-1069-X
Electronic_ISBN
1-4244-1070-3
Type
conf
DOI
10.1109/IITC.2007.382383
Filename
4263695
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