Author :
Kudo, Hiroyuki ; Ochimizu, H. ; Tsukune, A. ; Okano, S. ; Naitou, K. ; Sakamoto, Makoto ; Takesako, S. ; Shirasu, T. ; Asneil, A. ; Idani, Naoki ; Sugimoto, Kazuya ; Ozaki, S. ; Nakata, Y. ; Owada, Tetsu ; Watatani, H. ; Ohara, N. ; Ohtsuka, N. ; Sunayama
Abstract :
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86 % compared to that listed in the ITRS 2006 update.
Keywords :
RC circuits; dielectric materials; integrated circuit interconnections; BEOL technology; RC delay reduction; homogeneous interlayer dielectric; size 45 nm; ultrathinned barrier metal; Capacitance; Degradation; Delay; Dielectric constant; Electric variables; Etching; Laboratories; Microprocessors; Surges; Wiring;
