Title :
Chip Package Interaction for 65nm CMOS Technology with C4 Interconnections
Author :
Farooq, Mukta ; Melville, Ian ; Muzzy, Christopher ; McLaughlin, Paul V. ; Hannon, Robert ; Sauter, Wolfgang ; Muncy, Jennifer ; Questad, David ; Carey, Charles ; Cullinan-Scholl, Mary ; McGahay, Vincent ; Angyal, Matthew ; Nye, Henry ; Lane, Michael ; Li
Author_Institution :
IBM Microelectron., Hopewell Junction
Abstract :
This paper discusses the chip package interaction (CPI) for a 65 nm low k BEOL CMOS chip assembled to an organic package. Inter-level dielectrics with k~3.0 and k~2.7, with oxide terminations, were used in combination with both Sn/Pb and lead-free C4s. Various underfill compounds were tested to determine their effectiveness in mitigating chip stresses without significantly impairing C4 fatigue life. A summary of the reliability stress results will be presented.
Keywords :
CMOS integrated circuits; chip scale packaging; dielectric devices; integrated circuit interconnections; semiconductor device reliability; stress analysis; C4 interconnections; Sn-Pb; chip package interaction; chip stresses; inter-level dielectrics; low k BEOL CMOS chip; organic package; oxide terminations; reliability stress; size 65 nm; Assembly; CMOS technology; Dielectrics; Environmentally friendly manufacturing techniques; Fatigue; Lead compounds; Life testing; Packaging; Stress; Tin;
Conference_Titel :
International Interconnect Technology Conference, IEEE 2007
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-1069-X
Electronic_ISBN :
1-4244-1070-3
DOI :
10.1109/IITC.2007.382388
