DocumentCode :
2964457
Title :
Beyond nanoscale DRAM and flash challenges and opportunities for research in emerging memory devices
Author :
Tran, Luan C.
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fYear :
2004
fDate :
2004
Firstpage :
35
Lastpage :
38
Abstract :
As dynamic random access memory (DRAM) and flash nonvolatile memory (NVM) technologies are entering their 4th decade of continuing growth and progress, difficulties in scaling these respective devices have surfaced both in processing and device miniaturization. This paper addresses these challenges and presents emerging device alternatives with their perspective challenges and opportunities for research and development in this field.
Keywords :
DRAM chips; flash memories; nanoelectronics; NVM; device scaling; dynamic random access memory; flash nonvolatile memory; nanoscale DRAM; Capacitors; EPROM; Microprocessors; Nanoscale devices; Nonvolatile memory; Paper technology; Phase change random access memory; Random access memory; Switches; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2004 IEEE Workshop on
Print_ISBN :
0-7803-8369-9
Type :
conf
DOI :
10.1109/WMED.2004.1297344
Filename :
1297344
Link To Document :
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