• DocumentCode
    2964457
  • Title

    Beyond nanoscale DRAM and flash challenges and opportunities for research in emerging memory devices

  • Author

    Tran, Luan C.

  • Author_Institution
    Micron Technol. Inc., Boise, ID, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    As dynamic random access memory (DRAM) and flash nonvolatile memory (NVM) technologies are entering their 4th decade of continuing growth and progress, difficulties in scaling these respective devices have surfaced both in processing and device miniaturization. This paper addresses these challenges and presents emerging device alternatives with their perspective challenges and opportunities for research and development in this field.
  • Keywords
    DRAM chips; flash memories; nanoelectronics; NVM; device scaling; dynamic random access memory; flash nonvolatile memory; nanoscale DRAM; Capacitors; EPROM; Microprocessors; Nanoscale devices; Nonvolatile memory; Paper technology; Phase change random access memory; Random access memory; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2004 IEEE Workshop on
  • Print_ISBN
    0-7803-8369-9
  • Type

    conf

  • DOI
    10.1109/WMED.2004.1297344
  • Filename
    1297344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2964457