Title :
2.4 GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18 μm TSMC CMOS
Author :
Kunz, E. ; Parke, S.
Author_Institution :
Boise State Univ., ID, USA
Abstract :
A 2.4 GHz low-noise amplifier has been designed in a standard CMOS 0.18 TSMC process. The measured noise factor and gain are 1.65dB and 51dB, respectively, at 2.4 GHz. The LNA draws 1.75 mA from a 1.8 V supply voltage. The detailed design process and simulations are detailed in this paper.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; low-power electronics; 1.75 mA; 1.8 V; 2.4 GHz; 51 dB; CMOS TSMC process; bias circuit; cascode configuration; design process; high gain amplifier; low power amplifier; narrowband low-noise amplifier; noise factor; simulations; CMOS process; Circuit simulation; Energy consumption; Frequency; Low-noise amplifiers; Narrowband; Noise figure; Noise measurement; Process design; Voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2004 IEEE Workshop on
Print_ISBN :
0-7803-8369-9
DOI :
10.1109/WMED.2004.1297350
