DocumentCode
2964637
Title
“Structure and properties of deep-UV AlGaN MQW laser”
Author
Kawanishi, Hideo
Author_Institution
Kogakuin Univ., Hachioji
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
36
Lastpage
37
Abstract
Structure and properties of UV and deep-UV AlGaN MQW laser grown on c-plane SiC substrate are discussed. TM-mode lasing was demonstrated in deep-UV spectrum region. This is originated in band structure of AlGaN.
Keywords
III-V semiconductors; aluminium compounds; band structure; gallium compounds; laser modes; quantum well lasers; wide band gap semiconductors; AlGaN; SiC; TM-mode lasing; band structure; c-plane substrate; deep-UV MQW laser; deep-UV multiple quantum well laser; deep-UV spectrum region; Aluminum gallium nitride; Optical pumping; Optical surface waves; Pump lasers; Quantum well devices; Semiconductor lasers; Silicon carbide; Substrates; Surface emitting lasers; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634427
Filename
4634427
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