Title :
“Structure and properties of deep-UV AlGaN MQW laser”
Author :
Kawanishi, Hideo
Author_Institution :
Kogakuin Univ., Hachioji
Abstract :
Structure and properties of UV and deep-UV AlGaN MQW laser grown on c-plane SiC substrate are discussed. TM-mode lasing was demonstrated in deep-UV spectrum region. This is originated in band structure of AlGaN.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; laser modes; quantum well lasers; wide band gap semiconductors; AlGaN; SiC; TM-mode lasing; band structure; c-plane substrate; deep-UV MQW laser; deep-UV multiple quantum well laser; deep-UV spectrum region; Aluminum gallium nitride; Optical pumping; Optical surface waves; Pump lasers; Quantum well devices; Semiconductor lasers; Silicon carbide; Substrates; Surface emitting lasers; Temperature dependence;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634427
