DocumentCode
2964687
Title
Through wafer interconnects on active pMOS devices
Author
Johnson, Vaughn N. ; Jozwiak, Jim ; Moll, Amy
Author_Institution
Coll. of Eng., Boise State Univ., ID, USA
fYear
2004
fDate
2004
Firstpage
82
Lastpage
84
Abstract
The objective of this research is to demonstrate the ability to create through-wafer interconnects (TWIs) on wafers with active devices. TWIs have previously been demonstrated on blank Si wafers. The application of TWIs in an industrial setting requires no damage or yield loss to the existing devices during additional processing steps. The test vehicle chosen is a simple pMOS test chip, which includes different structures such as transistors and invertors. The processing steps and sequence required to integrate TWIs into wafers with active devices is demonstrated.
Keywords
MOS integrated circuits; integrated circuit interconnections; TWI processing steps; active pMOS devices; invertors; processing sequence; through-wafer interconnects; transistors; Copper; Etching; Integrated circuit interconnections; Inverters; MOS devices; Plasma applications; Resists; Silicon; Testing; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices, 2004 IEEE Workshop on
Print_ISBN
0-7803-8369-9
Type
conf
DOI
10.1109/WMED.2004.1297358
Filename
1297358
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