• DocumentCode
    2964687
  • Title

    Through wafer interconnects on active pMOS devices

  • Author

    Johnson, Vaughn N. ; Jozwiak, Jim ; Moll, Amy

  • Author_Institution
    Coll. of Eng., Boise State Univ., ID, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    82
  • Lastpage
    84
  • Abstract
    The objective of this research is to demonstrate the ability to create through-wafer interconnects (TWIs) on wafers with active devices. TWIs have previously been demonstrated on blank Si wafers. The application of TWIs in an industrial setting requires no damage or yield loss to the existing devices during additional processing steps. The test vehicle chosen is a simple pMOS test chip, which includes different structures such as transistors and invertors. The processing steps and sequence required to integrate TWIs into wafers with active devices is demonstrated.
  • Keywords
    MOS integrated circuits; integrated circuit interconnections; TWI processing steps; active pMOS devices; invertors; processing sequence; through-wafer interconnects; transistors; Copper; Etching; Integrated circuit interconnections; Inverters; MOS devices; Plasma applications; Resists; Silicon; Testing; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2004 IEEE Workshop on
  • Print_ISBN
    0-7803-8369-9
  • Type

    conf

  • DOI
    10.1109/WMED.2004.1297358
  • Filename
    1297358