UHF-Band Long-Pulse Radar Power Amplifiers using Push-Pull and Balanced Configurations

Author

Park, Ji-Yong ; Burger, Jeff ; Titizian, John

Author_Institution

Integra Technol. Inc., El Segundo

fYear

2007

fDate

3-8 June 2007

Firstpage

15

Lastpage

18

Abstract

UHF-band long-pulse radar BJT power amplifiers using push-pull and balanced configurations are presented. The NPN BJTs are fabricated in a state-of-the-art 6" silicon wafer fab at Integra Technologies Inc. The BJTs are internally matched and mounted on BeO package. To handle low frequency oscillations, band-rejection filter type bias circuit and negative feedback are employed. Common base configuration and class C bias are used. The device DC parameters are BVces = 86 V and Hfe = 25. Operating with PW=1.1ms and DF=26%, the power amplifiers provide more than 500-W output peak power, 50-% efficiency, and 8.2-dB gain from 400 MHz to 460 MHz.

Keywords

UHF power amplifiers; bipolar transistor circuits; circuit feedback; power bipolar transistors; radar equipment; BJT power amplifiers; UHF-band long-pulse radar power amplifiers; balanced configuration; band-rejection filter type bias circuit; efficiency 50 percent; frequency 400 MHz to 460 MHz; gain 8.2 dB; negative feedback; push-pull configuration; Frequency; Packaging; Power amplifiers; Power transistors; Pulse amplifiers; Pulse modulation; Radar antennas; Solid state circuits; Space vector pulse width modulation; Transmitters; Power transistors; UHF power amplifiers; pulse amplifiers; pulse radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380206

Filename

4263728