Title :
Effects of hydrogen in passivation PECVD nitride film on DRAM refresh performance
Author :
Yin, Z. ; Christianson, D. ; Pasta, R.
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
It was found that passivation nitride significantly affects DRAM refresh performance. To determine the factors in the nitride film that contributed to improved refresh performance, several analyses, such as Fourier-transform infrared spectrum (FTIR), thermal desorption spectrum (TDS), and x-ray photon spectroscopy (XPS), were performed on plasma enhanced chemical vapor deposition (PECVD) nitride film. The data revealed that the film with high Si-H bond in PECVD nitride film release more hydrogen in subsequent thermal process, in turn, to improved refresh performance.
Keywords :
DRAM chips; Fourier transform spectra; X-ray photoelectron spectra; infrared spectra; nitridation; passivation; plasma CVD coatings; thermally stimulated desorption; DRAM refresh performance; Fourier-transform infrared spectrum; SiN; XPS; forming gas anneal; high Si-H bond; hydrogen effects; interface defects; leakage performance; passivation PECVD nitride film; refractive index; thermal desorption spectrum; Chemical analysis; Hydrogen; Infrared spectra; Passivation; Performance analysis; Plasma chemistry; Plasma x-ray sources; Random access memory; Spectroscopy; Thermal factors;
Conference_Titel :
Microelectronics and Electron Devices, 2004 IEEE Workshop on
Print_ISBN :
0-7803-8369-9
DOI :
10.1109/WMED.2004.1297369
