Source-pull and multiharmonic load-pull measurements based on six-port techniques

Author

Berghoff, G. ; Gibrat, O. ; Bergeault, E. ; Huyart, B. ; Jallet, L.

Author_Institution

ENST, Paris, France

fYear

1998

fDate

6-10 July 1998

Firstpage

492

Lastpage

493

Abstract

An original measurement system for nonlinear microwave power transistor characterization, using six-port reflectometers, is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). Experimental results are shown for a commercial GaAs MESFET power transistor.

Keywords

III-V semiconductors; gallium arsenide; microwave power transistors; microwave reflectometry; network analysers; power MESFET; reflectometers; semiconductor device measurement; GaAs; MESFET power transistor; independent active tuning; input port; large signal measurement system; multiharmonic load-pull measurements; nonlinear microwave power transistor characterization; output impedances; power added efficiency; six-port reflectometers; six-port techniques; source impedance variation; source-pull measurements; Frequency conversion; Impedance; Isolators; Load management; Power harmonic filters; Power measurement; Power transistors; Reflection; Switches; Switching converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 1998 Conference on

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5018-9

Type

conf

DOI

10.1109/CPEM.1998.700021

Filename

700021