Title :
Sub-terahertz and terahertz oscillators at room temperature using electron devices
Author_Institution :
CREST, Tokyo Inst. of Technol., Tokyo
Abstract :
Compact and coherent sources are key devices for wide applications of the terahertz (THz) frequency range. In this paper, we report on our recent results of RTD oscillators in the THz and sub-THz range.
Keywords :
aluminium compounds; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling diodes; submillimetre wave oscillators; tunnel diode oscillators; GaInAs-AlAs; InP; RTD oscillators; electron devices; room temperature subterahertz oscillator; room temperature terahertz oscillators; temperature 293 K to 298 K; Electron devices; Frequency; Injection-locked oscillators; Power harmonic filters; Quantum cascade lasers; Reflector antennas; Slot antennas; Submillimeter wave technology; Temperature; Voltage;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634449
