• DocumentCode
    2965100
  • Title

    GaN-based nanocolumn emitters and related technology

  • Author

    Kishino, Katsumi

  • Author_Institution
    Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    Self-assembled InGaN nanocolumn LEDs emitting from ultraviolet to red were fabricated on n-type (111) Si substrates by rf-MBE. To achieve homogenization of nanocolumns, Ti-mask selective area growth was developed to fabricate uniform arrays of GaN nanocolumns.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; self-assembly; wide band gap semiconductors; GaN; InGaN; nanocolumn emitters; self-assembled nanocolumn LED; Fabrication; Fluctuations; Gallium nitride; Glass; Light emitting diodes; Molecular beam epitaxial growth; Nanotechnology; Nitrogen; Self-assembly; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634458
  • Filename
    4634458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2965100