Title :
A modular approach for high Q microwave CMOS active inductor design
Author :
Chiang, K.H. ; Chiang, K.V. ; Lam, K.F. ; Choi, W.W. ; Tam, K.W. ; Martins, Rui
Author_Institution :
Fac. of Sci. & Technol., Macau Univ., China
Abstract :
In this paper, a modular approach for the L-band CMOS Active Inductor (AI) is proposed and designed based upon a connection in series of conventional low Q-factor gyrator-C basic cells. The Q-factor can then be tuned by the number of AI cells in order to offer simplicity in terms of pole/zero cancellation, while maintaining in each gyrator-C inductor cell low values of Q. In order to demonstrate the proposed architecture´s usefulness, a prototype L-band active inductor is designed in a 0.6 μm CMOS process. The simulated results show that a high Q value of 972 is obtained at 2 GHz and an average Q-factor value of 200 is also achieved in the frequency range of 1-2 GHz
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; active networks; field effect MMIC; gyrators; inductors; integrated circuit design; poles and zeros; 0.6 micron; 1 to 2 GHz; L-band inductor; high-Q active inductor design; low Q-factor gyrator-C basic cells; microwave CMOS active inductor design; modular approach; pole/zero cancellation; Active inductors; Artificial intelligence; CMOS technology; Frequency; Impedance; L-band; Mobile communication; Poles and zeros; Prototypes; Q factor;
Conference_Titel :
Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on
Conference_Location :
Jounieh
Print_ISBN :
0-7803-6542-9
DOI :
10.1109/ICECS.2000.911480
