Title :
Phonon interactions in InAs/GaAs quantum dots
Author :
Werner, Stefan ; Zimmer, Patrick ; Ledentsov, N.N. ; Hoffmann, Axel
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin
Abstract :
We present a time- and temperature-resolved study of carrier-phonon interactions in self-organized InAs/GaAs quantum dots under resonant excitation of the ground-state transition, giving proof of the coherent character of the Raman scattering.
Keywords :
III-V semiconductors; Raman spectra; electron-phonon interactions; gallium arsenide; indium compounds; semiconductor quantum dots; time resolved spectra; InAs-GaAs; carrier-phonon interactions; coherent Raman scattering; ground-state transition; quantum dots; resonant excitation; self-organized quantum dots; temperature-resolved study; time-resolved study; Excitons; Gallium arsenide; Optical scattering; Phonons; Quantum dots; Radiative recombination; Raman scattering; Resonance; Spontaneous emission; Stationary state;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634476
