Title :
Coalescence overgrowth of GaN nanocolumns
Author :
Tang, Tsung-Yi ; Shiao, Wen-Yu ; Chen, Yung-Sheng ; Averett, Kent L. ; Albrecht, John D. ; Yang, C.C.
Author_Institution :
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
Abstract :
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; nanostructured materials; nanotechnology; semiconductor growth; wide band gap semiconductors; GaN; coalescence overgrowth; crystal qualities; depth-dependent X-ray diffraction; metalorganic chemical vapor deposition; nanocolumns; optical qualities; sapphire substrates; Chemical vapor deposition; Gallium nitride; MOCVD; Molecular beam epitaxial growth; Nitrogen; Plasma temperature; Scanning electron microscopy; Substrates; Surface morphology; X-ray diffraction;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634477
