• DocumentCode
    2965616
  • Title

    Growth of InAs/Sb:GaAs quantum dots on silicon emitting at 1.3 μm

  • Author

    Rajesh, M. ; Lin Li ; Guimard, D. ; Arakawa, Yasuhiko

  • Author_Institution
    RCAST, Univ. of Tokyo, Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    We report the growth of self-organized InAs/Sb:GaAs quantum dots (QDs) on silicon (Si) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). High density QDs aligned along [0-11] direction was obtained. These QDs exhibit ground state emission at 1.3 mum at room temperature (RT).
  • Keywords
    III-V semiconductors; MOCVD coatings; antimony; gallium arsenide; indium alloys; self-assembly; semiconductor quantum dots; InAs-Sb:GaAs; MOCVD; self organized quantum dots; semiconductor quantum dots; Chemical vapor deposition; Gallium arsenide; Land surface temperature; Light sources; MOCVD; Optical interconnections; Organic chemicals; Quantum dots; Silicon; Stationary state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634487
  • Filename
    4634487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2965616