Title :
Role of vapor-phase diffusion in selective-area MOVPE of InGaN MQWs
Author :
Tomita, Yuki ; Shioda, Tomonari ; Nakano, Yoshiaki ; Sugiyama, Masakazu
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo
Abstract :
Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs) for multiple-wavelength LED is fabricated and characterized. As a result, the emission peak shifts to longer wavelengths and the wider mask leads to longer wavelength.
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; surface diffusion; vapour phase epitaxial growth; wide band gap semiconductors; InGaN-GaN; cathode luminescence; multiple quantum wells; multiple-wavelength LED; selective-area MOVPE; selective-area growth; surface diffusion length; vapor-phase diffusion; Chemical engineering; Epitaxial growth; Epitaxial layers; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Luminescence; Optical devices; Professional societies; Quantum well devices;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634493
