DocumentCode
2965721
Title
Role of vapor-phase diffusion in selective-area MOVPE of InGaN MQWs
Author
Tomita, Yuki ; Shioda, Tomonari ; Nakano, Yoshiaki ; Sugiyama, Masakazu
Author_Institution
Sch. of Eng., Univ. of Tokyo, Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
163
Lastpage
164
Abstract
Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs) for multiple-wavelength LED is fabricated and characterized. As a result, the emission peak shifts to longer wavelengths and the wider mask leads to longer wavelength.
Keywords
III-V semiconductors; MOCVD; cathodoluminescence; gallium compounds; indium compounds; semiconductor growth; semiconductor quantum wells; surface diffusion; vapour phase epitaxial growth; wide band gap semiconductors; InGaN-GaN; cathode luminescence; multiple quantum wells; multiple-wavelength LED; selective-area MOVPE; selective-area growth; surface diffusion length; vapor-phase diffusion; Chemical engineering; Epitaxial growth; Epitaxial layers; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Luminescence; Optical devices; Professional societies; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634493
Filename
4634493
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