Title :
A study of hydrogen gas sensing performance of Pt/Graphene/GaN devices
Author :
Yu, J. ; Shafiei, M. ; Ou, J. ; Shin, K. ; Wlodarski, W.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia
Abstract :
In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I-V) and dynamic response of the developed devices were investigated in forward and reverse bias operation at an optimum temperature of 160°C. Voltage shifts of 661.1 and 484.9 mV were recorded towards 1% hydrogen at forward and reverse constant bias current of 1 mA, respectively.
Keywords :
CVD coatings; III-V semiconductors; Raman spectra; X-ray photoelectron spectra; gallium compounds; gas sensors; graphene; hydrogen; platinum; semiconductor devices; GaN; GaN substrate; H2; Pt-C-GaN; Pt/graphene/GaN devices; Raman spectroscopy; X-ray photoelectron spectroscopy; chemical vapour deposition technique; current-voltage response; dynamic response; forward bias operation; graphene layer; hydrogen gas sensing performance; reverse bias operation; temperature 160 degC; voltage shifts; Films; Gallium nitride; Metals; Performance evaluation; Sensors; Substrates;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6126969
