Title :
Improvement of thick InGaN template by thin InGaN buffer grown at low temperature
Author :
Zhao, Wei ; Wang, Lai ; Xi, Guangyi ; Li, Hongtao ; Jiang, Yang ; Han, Yanjun ; Luo, Yi
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing
Abstract :
Thick InGaN templates with an without InGaN buffer were grown using MOCVD method. It is demonstrated that the crystal quality of the InGaN template can be efficiently improved by the InGaN buffer layer.
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; indium compounds; semiconductor growth; wide band gap semiconductors; InGaN; MOCVD method; crystal quality; low temperature growth; thick template; thin buffer; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634501
