Title :
Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm
Author :
Park, J. ; Kim, N.J. ; Song, I.S. ; Yee, K.J. ; Lee, D. ; Pyun, S.H. ; Jeong, W.G. ; Jang, J.W.
Author_Institution :
Chungnam Nat. Univ., Daejeon
Abstract :
We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; semiconductor optical amplifiers; InAs-InGaAsP; gain dynamics; ground state; quantum dot semiconductor optical amplifier; recovery time; wavelength 1.5 mum; Absorption; Gain measurement; Optical interferometry; Optical pulse generation; Optical wavelength conversion; Probes; Pulse amplifiers; Quantum dots; Semiconductor optical amplifiers; Stationary state;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634502
