Title :
Quantum-dot Semiconductor disk-lasers
Author :
Germann, T.D. ; Strittmatter, A. ; Pohl, J. ; Pohl, U.W. ; Bimberg, D. ; Rautiainen, J. ; Guina, M. ; Okhotnikov, O.G.
Author_Institution :
Inst. of Solid State Phys., Berlin Univ. of Technol., Berlin
Abstract :
Quantum Dot based Semiconductor disk lasers are developed at 950 nm, 1040 nm, and 1210 nm wavelength. Up to 1.4 W output power and temperature independent cw-operation is demonstrated using different quantum dot growth techniques.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; quantum dot lasers; semiconductor growth; AlGaAs-GaAs; output power; quantum dot growth; quantum-dot semiconductor disk-lasers; temperature independent cw-operation; wavelength 1040 nm; wavelength 1210 nm; wavelength 950 nm; Gallium arsenide; Laser excitation; Optical pumping; Physics; Power generation; Pump lasers; Quantum dot lasers; Quantum dots; Resonance; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634508
