• DocumentCode
    2966017
  • Title

    New TCE-matched glass-ceramic multi-chip module. II. Materials, mechanical, and thermal aspects

  • Author

    Carrier, G. ; Francis, G.L. ; Paisley, R.J. ; Subrahmanyan, R. ; Li, C.-Y. ; Pence, W.E. ; Krusius, J.P. ; Holleran, L.M.

  • Author_Institution
    Corning Glass Works, Corning, NY, USA
  • fYear
    1989
  • fDate
    22-24 May 1989
  • Firstpage
    652
  • Lastpage
    655
  • Abstract
    For pt.I see ibid., p.647-51 (1989). A glass-ceramic multichip packaging technology is discussed. The module substrate material is a glass-ceramic (Corning 9641), which can be TCE (thermal coefficient of expansion) matched to silicon (3.4 p.p.m./°C) and possesses a low dielectric constant (5.2). The 9641 substrate permits large-area silicon chips (~1 cm×1 cm) to be mounted using flip-chip techniques. Multilayer metallization (Au) layers in the substrate are screen printed, and the laminated assembly is cofired to produce a 3-in, 36-chip test module. Silicon test chips 1-cm square with 81 I/Os are mounted by flip-chip bonding (95/5 Pb-Sn). Chip and module sizes equal to or greater than 1 cm and 3 in, respectively, are targets for this technology, referred to as the hybrid systems module (HSM). Significant improvement in solder joint reliability permits larger chips to be mounted on the module without degradation in the mean time to failure of the solder joints. Processing, materials, and thermal characterization data are presented
  • Keywords
    ceramics; circuit reliability; flip-chip devices; glass; hybrid integrated circuits; integrated circuit technology; modules; packaging; thermal expansion; 3 in; Au; Corning 9641; PbSn; TCE-matched; cofiring; flip-chip bonding; glass-ceramic multi-chip module; hybrid systems module; laminated assembly; large area Si chips; low dielectric constant; mean time to failure; multichip packaging technology; multilayer metallisation; screen printed layers; solder joint reliability; substrate material; thermal characterization data; thermal coefficient of expansion; Dielectric constant; Dielectric materials; Dielectric substrates; Metallization; Nonhomogeneous media; Packaging; Silicon; Soldering; Testing; Thermal expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components Conference, 1989. Proceedings., 39th
  • Conference_Location
    Houston, TX
  • Type

    conf

  • DOI
    10.1109/ECC.1989.77820
  • Filename
    77820