Electrical characteristics of novel ESD protection devices for I/O clamp

Author

Wonsuk Park ; Byungseok Lee ; Dongsu Kim ; Bobae Song ; Yongseo Koo

Author_Institution

Dept. of Electron. & Electr. Eng., Dankook Univ., Yongin, South Korea

fYear

2012

fDate

19-22 Nov. 2012

Firstpage

1

Lastpage

5

Abstract

This paper presents a novel silicon controlled rectifier (SCR)-based ESD protection devices for I/O clamp. The proposed ESD protection devices has a low trigger voltage and high holding voltage characteristics than conventional SCR. The proposed devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) technology. From the experimental results, the device (PTSCR) for I/O clamp has a trigger voltage of 6.5V, 7.7V and 8.1V with the LG1 of 0.5um, 0.8um and 1um, respectively. The proposed ESD protection device (MPTSCR) has a lower trigger voltage of 5.6V. Also, the robustness has measured to human body model (HBM) 7kV and machine model (MM) 400V.

Keywords

CMOS integrated circuits; bipolar integrated circuits; electrostatic discharge; thyristors; ESD protection device; I/O clamp; bipolar CMOS DMOS technology; electrical characteristics; electrostatic discharge; holding voltage characteristics; human body model; machine model; silicon controlled rectifier; trigger voltage; Cathodes; Clamps; Discharges (electric); Electrostatic discharges; Junctions; Robustness; Thyristors; ESD(Electro-Static Discharge); I/O Clamp; Silicon Controlled Rectifier(SCR);

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2012 - 2012 IEEE Region 10 Conference

Conference_Location

Cebu

ISSN

2159-3442

Print_ISBN

978-1-4673-4823-2

Electronic_ISBN

2159-3442

Type

conf

DOI

10.1109/TENCON.2012.6412316

Filename

6412316