Title :
WE1A: Power Characteristics and Performance Enhancement Techniques for III-V and Silicon Based Devices
Keywords :
III-V semiconductor materials; Laboratories; Robustness; Silicon; Voltage;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380411
