Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide

Author

Brown, J.D. ; Lee, S. ; Lieu, D. ; Martin, J. ; Vetury, R. ; Poulton, M.J. ; Shealy, J.B.

Author_Institution

RFMD, Charlotte

fYear

2007

fDate

3-8 June 2007

Firstpage

303

Lastpage

306

Abstract

Gallium nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high operating voltage, this technology may also be suited for applications that utilize modulation of the drain voltage to improve overall amplifier efficiency. RFMD has developed a GaN HEMT technology platform on semi-insulating SiC substrates. This technology includes a 0.5 mum gate process and advanced field plate designs to maximize device performance. We report on devices from this technology, operated over a range of drain bias conditions. Performance and reliability results illustrate the compatibility of this device technology for high voltage and variable voltage applications.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; RFMD; SiC; drain bias conditions; field plate designs; gallium nitride; gate process; high electron mobility transistor technology; silicon carbide; voltage 48 V; voltage dependent characteristics; Aluminum gallium nitride; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Power amplifiers; Semiconductor optical amplifiers; Silicon carbide; Substrates; Voltage; FETs; Gallium compounds; microwave amplifier; power amplifiers; scattering parameters; semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380412

Filename

4263807