Title :
FET Gate Length Impact on Reliability
Author :
Darwish, A.M. ; Bayba, A. ; Hung, H.A.
Author_Institution :
Army Res. Lab., Adelphi
Abstract :
The constant need for higher speed continues to lead to shorter and shorter gate lengths. An analytical expression relating the reliability and gate length is developed. According to the model, the FET reliability degrades exponentially with decreasing gate length. Experimental observations support the model´s conclusions.
Keywords :
field effect transistors; semiconductor device models; semiconductor device reliability; FET gate length; field effect transistors; semiconductor device reliability; Atomic force microscopy; FETs; Fingers; Integrated circuit reliability; Resistance heating; Temperature; Thermal conductivity; Thermal degradation; Thermal force; Thermal resistance; Channel Temperature; FET; Gate Length; Reliability; Thermal Resistance;
Conference_Titel :
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0688-9
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2007.380414
