DocumentCode :
2966150
Title :
Quantum structure intermixing for small vertical-cavity surface-emitting laser
Author :
Sugawara, Yuta ; Miyamoto, Tomoyuki
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama
fYear :
2008
fDate :
2-15 Aug. 2008
Firstpage :
227
Lastpage :
228
Abstract :
The method to confine the carrier in the quantum well laterally was investigated for a vertical-cavity surface-emitting laser. The process condition of the quantum structure intermixing was studied and applied to the VCSEL.
Keywords :
laser cavity resonators; quantum well lasers; surface emitting lasers; VCSEL; carrier confinement; quantum structure intermixing; quantum well; vertical-cavity surface-emitting laser; Annealing; Atomic layer deposition; Carrier confinement; Energy consumption; Gallium arsenide; Indium gallium arsenide; Potential energy; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
Type :
conf
DOI :
10.1109/INOW.2008.4634520
Filename :
4634520
Link To Document :
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