DocumentCode
2966150
Title
Quantum structure intermixing for small vertical-cavity surface-emitting laser
Author
Sugawara, Yuta ; Miyamoto, Tomoyuki
Author_Institution
P&I Lab., Tokyo Inst. of Technol., Yokohama
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
227
Lastpage
228
Abstract
The method to confine the carrier in the quantum well laterally was investigated for a vertical-cavity surface-emitting laser. The process condition of the quantum structure intermixing was studied and applied to the VCSEL.
Keywords
laser cavity resonators; quantum well lasers; surface emitting lasers; VCSEL; carrier confinement; quantum structure intermixing; quantum well; vertical-cavity surface-emitting laser; Annealing; Atomic layer deposition; Carrier confinement; Energy consumption; Gallium arsenide; Indium gallium arsenide; Potential energy; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634520
Filename
4634520
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