A 245-GHz MMIC Amplifier with 80-μm Output Periphery and 12-dB Gain

Author

Deal, W.R. ; Mei, X.B. ; Radisic, V. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Gaier, T. ; Fung, A. ; Samoska, L. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach

fYear

2007

fDate

3-8 June 2007

Firstpage

329

Lastpage

332

Abstract

In this paper we present a MMIC amplifier which demonstrates ˜12-dB gain at a center frequency of 245-GHz. The MMIC is intended to demonstrate the potential of power amplification at short-millimeter wave frequencies. Each stage of the three stage amplifier utilizes a 1:2 output split to reach a total output periphery of 80-μm. The combination of high realized gain per stage and output periphery indicate the potential generating output powers on the order of several mW at short mm-wave frequencies using MMIC amplifiers for the first time. The amplifier is implemented in coplanar waveguide and uses an InP HEMT process with a 35-nm gate.

Keywords

HEMT circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguides; indium compounds; InP; InP HEMT process; MMIC amplifier; coplanar waveguide; frequency 245 GHz; gain 12 dB; power amplification; size 35 nm; size 80 μm; three stage amplifier; Coplanar waveguides; Frequency; HEMTs; High power amplifiers; Indium phosphide; Low-noise amplifiers; MMICs; Power amplifiers; Power generation; Radiofrequency amplifiers; Coplanar Waveguide; HEMT; MMIC; Millimeter Wave; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0687-0

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380419

Filename

4263814