DocumentCode
2966394
Title
Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K
Author
Lee, E.G. ; Kim, N.J. ; Lee, J. ; Lee, D. ; Pyun, S.H. ; Jeong, W.G. ; Jang, J.W.
Author_Institution
Chungnam Nat. Univ., Daejeon
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
255
Lastpage
256
Abstract
Small gain peak shift of 5 nm and broadening of gain spectrum are observed for InAs/InGaAsP quantum dot laser diodes at 15 and 300 K. This observation is likely due to inhomogeneous characteristics of quantum dot laser diodes.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor lasers; InAs-InGaAsP; gain peak shift; gain spectrum broadening; inhomogeneous lasing characteristics; quantum dot laser diodes; temperature 15 K; temperature 300 K; Diode lasers; Gallium arsenide; Indium phosphide; Performance gain; Photoluminescence; Quantum dot lasers; Stationary state; Temperature; Threshold current; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634534
Filename
4634534
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