DocumentCode
2966410
Title
New semiconductor materials and devices for terahertz imaging and sensing
Author
Otsuji, T. ; Watanabe, T. ; Akagawa, K. ; Tanimoto, Y. ; Tombet, S. Boubanga ; Suemitsu, T. ; Chan, S. ; Coquillat, D. ; Knap, W. ; Ryzhii, V.
Author_Institution
RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2011
fDate
28-31 Oct. 2011
Firstpage
44
Lastpage
47
Abstract
Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.
Keywords
III-V semiconductors; graphene; high electron mobility transistors; nonlinear dynamical systems; terahertz wave imaging; nonlinear dynamics; plasmons; quantum wells; semiconductor materials; terahertz imaging; terahertz sensing; two-dimensional semiconductors; HEMTs; Imaging; Logic gates; Materials; Plasma waves; Plasmons; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2011 IEEE
Conference_Location
Limerick
ISSN
1930-0395
Print_ISBN
978-1-4244-9290-9
Type
conf
DOI
10.1109/ICSENS.2011.6127001
Filename
6127001
Link To Document