Title :
New semiconductor materials and devices for terahertz imaging and sensing
Author :
Otsuji, T. ; Watanabe, T. ; Akagawa, K. ; Tanimoto, Y. ; Tombet, S. Boubanga ; Suemitsu, T. ; Chan, S. ; Coquillat, D. ; Knap, W. ; Ryzhii, V.
Author_Institution :
RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.
Keywords :
III-V semiconductors; graphene; high electron mobility transistors; nonlinear dynamical systems; terahertz wave imaging; nonlinear dynamics; plasmons; quantum wells; semiconductor materials; terahertz imaging; terahertz sensing; two-dimensional semiconductors; HEMTs; Imaging; Logic gates; Materials; Plasma waves; Plasmons; Sensors;
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
Print_ISBN :
978-1-4244-9290-9
DOI :
10.1109/ICSENS.2011.6127001
