Title :
Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs
Author :
Lai, Wang ; Yi, Luo ; Yanjun, Han ; Hongtao, Li ; Guangyi, Xi ; Yang, Jiang ; Wei, Zhao
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing
Abstract :
InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.
Keywords :
III-V semiconductors; diffusion; gallium compounds; indium compounds; light emitting diodes; semiconductor doping; semiconductor quantum wells; silicon; wide band gap semiconductors; InGaN-GaN:Si; MQW LEDs; diffusion; doping; electrical characteristics; electrical properties; optical properties; Excitons; Gallium nitride; Integrated optics; Integrated optoelectronics; Laboratories; Light emitting diodes; Optical buffering; Phonons; Quantum well devices; Temperature dependence;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634535
