• DocumentCode
    2966507
  • Title

    Advanced MBE Low temperature grown materials for CW THz generation and detection

  • Author

    Missous, M.

  • Author_Institution
    Microelectron. & Nanostruct. Group, Univ. of Manchester, Manchester, UK
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    184
  • Lastpage
    186
  • Abstract
    A detailed characterization of undoped and Be doped Low temperature grown InGaAs-InAlAs structures is undertaken to correlate the structural point defect behavior with obtained electrical and optical properties. By a judicious combination of doping and annealing temperatures, materials with sub-picoseconds lifetimes and resistivity of ~ 1×107 ohm/square have been obtained. This is the highest resistivity reported to date for this material system.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; electrical resistivity; gallium arsenide; indium compounds; molecular beam epitaxial growth; point defects; semiconductor doping; semiconductor superlattices; terahertz wave detectors; terahertz wave generation; CW THz detection; CW THz generation; InGaAs-InAlAs; advanced MBE low temperature grown material; annealing temperature; doping temperature; electrical property; material system; optical property; Annealing; Conductivity; Doping; Gallium arsenide; Indium gallium arsenide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6127006
  • Filename
    6127006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966507