DocumentCode :
2966640
Title :
Terahertz electronics for sensing applications
Author :
Shur, Michael
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2011
fDate :
28-31 Oct. 2011
Firstpage :
40
Lastpage :
43
Abstract :
Terahertz sensing is used for detection of hidden objects, explosives and biological and chemical hazardous agents, and for applications in radio astronomy, space research, biology and medicine. Emerging THz transistor sensing technology uses the rectification of electron density oscillations in short channel Si CMOS and FIN FETs and III-V and III-N High Electron Mobility Transistors (HEMTs). Such plasma wave electronics detectors might be tunable by applied bias voltage and can be modulated at very high frequencies. Using synchronized THz plasmonic transistor arrays is expected to improve performance of THz electronic detectors by orders of magnitude.
Keywords :
CMOS integrated circuits; MOSFET; electron density; high electron mobility transistors; terahertz wave detectors; FINFET; III-N HEMT; III-N high electron mobility transistors; III-V HEMT; III-V high electron mobility transistors; THz transistor sensing technology; biological agents; chemical hazardous agents; electron density oscillation rectification; explosives; hidden objects; plasma wave electronics detectors; radio astronomy; sensing applications; short channel CMOS; space research; synchronized THz plasmonic transistor arrays; terahertz electronic detectors; Detectors; FETs; Logic gates; Plasma waves; Plasmons; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2011 IEEE
Conference_Location :
Limerick
ISSN :
1930-0395
Print_ISBN :
978-1-4244-9290-9
Type :
conf
DOI :
10.1109/ICSENS.2011.6127011
Filename :
6127011
Link To Document :
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