Terahertz electronics for sensing applications

Author

Shur, Michael

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2011

fDate

28-31 Oct. 2011

Firstpage

40

Lastpage

43

Abstract

Terahertz sensing is used for detection of hidden objects, explosives and biological and chemical hazardous agents, and for applications in radio astronomy, space research, biology and medicine. Emerging THz transistor sensing technology uses the rectification of electron density oscillations in short channel Si CMOS and FIN FETs and III-V and III-N High Electron Mobility Transistors (HEMTs). Such plasma wave electronics detectors might be tunable by applied bias voltage and can be modulated at very high frequencies. Using synchronized THz plasmonic transistor arrays is expected to improve performance of THz electronic detectors by orders of magnitude.

Keywords

CMOS integrated circuits; MOSFET; electron density; high electron mobility transistors; terahertz wave detectors; FINFET; III-N HEMT; III-N high electron mobility transistors; III-V HEMT; III-V high electron mobility transistors; THz transistor sensing technology; biological agents; chemical hazardous agents; electron density oscillation rectification; explosives; hidden objects; plasma wave electronics detectors; radio astronomy; sensing applications; short channel CMOS; space research; synchronized THz plasmonic transistor arrays; terahertz electronic detectors; Detectors; FETs; Logic gates; Plasma waves; Plasmons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2011 IEEE

Conference_Location

Limerick

ISSN

1930-0395

Print_ISBN

978-1-4244-9290-9

Type

conf

DOI

10.1109/ICSENS.2011.6127011

Filename

6127011