DocumentCode
2966746
Title
Optical characteristics of InAs/InGaAsP/InP quantum dot semiconductor optical amplifiers
Author
Baek, J.S. ; Lee, J. ; Kim, N.J. ; Lee, E.G. ; Lee, D. ; Pyun, S.H. ; Jeong, W.G. ; Jang, J.W.
Author_Institution
Dept. of Phys., Chungnam Nat. Univ., Daejeon
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
303
Lastpage
304
Abstract
We have fabricated semiconductor optical amplifiers (SOAs) which include InAs quantum dot (QD) active layers grown on InP substrate. The SOAs exhibit the relatively high optical gain, but their linewidth enhancement factors are relatively high, 5 ~ 7, at high operating currents.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; semiconductor optical amplifiers; InAs-InGaAsP-InP; linewidth enhancement factor; optical fabrication; optical gain; quantum dot semiconductor optical amplifiers; Gain measurement; Indium phosphide; Optical fiber polarization; Optical materials; Optical waveguides; Physics; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634554
Filename
4634554
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