Title :
Optical characteristics of InAs/InGaAsP/InP quantum dot semiconductor optical amplifiers
Author :
Baek, J.S. ; Lee, J. ; Kim, N.J. ; Lee, E.G. ; Lee, D. ; Pyun, S.H. ; Jeong, W.G. ; Jang, J.W.
Author_Institution :
Dept. of Phys., Chungnam Nat. Univ., Daejeon
Abstract :
We have fabricated semiconductor optical amplifiers (SOAs) which include InAs quantum dot (QD) active layers grown on InP substrate. The SOAs exhibit the relatively high optical gain, but their linewidth enhancement factors are relatively high, 5 ~ 7, at high operating currents.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; quantum dot lasers; semiconductor optical amplifiers; InAs-InGaAsP-InP; linewidth enhancement factor; optical fabrication; optical gain; quantum dot semiconductor optical amplifiers; Gain measurement; Indium phosphide; Optical fiber polarization; Optical materials; Optical waveguides; Physics; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Substrates;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634554
