Title :
Growth and micro-photoluminescence study of Si-doped GaAs nanoneedles grown on Si substrates
Author :
Chuang, Linus C. ; Moewe, Michael ; Crankshaw, Shanna ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
Abstract :
We report the growth and the micro-photoluminescence (mu-PL) study of Si-doped GaAs nanoneedles (NNs) grown on Si substrates by MOCVD. NN shape was not affected by the addition of Si dopants. The mu-PL peak wavelength was found redshifted with increasing disilane doping flow rate indicating bandgap narrowing. The mu-PL peak intensity was also higher as doping flow rate increased.
Keywords :
III-V semiconductors; MOCVD; elemental semiconductors; gallium arsenide; nanostructured materials; nanotechnology; photoluminescence; semiconductor doping; semiconductor growth; silicon; GaAs:Si; MOCVD; Si; bandgap narrowing; dopants; doping flow rate; micro-photoluminescence; nanoneedles; redshift; Atomic force microscopy; Doping; Electrons; Gallium arsenide; MOCVD; Neural networks; Optical surface waves; Photonic band gap; Shape; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location :
Shonan Village
Print_ISBN :
978-1-4244-2656-0
DOI :
10.1109/INOW.2008.4634559
